onsemi RFD14N05SM

onsemi · FETs & Power MOSFETs · MPN RFD14N05SM

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)40nC@20V
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)570pF
TypeN-Channel

Technical details

50V 14A 4V 48W 100mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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