onsemi · FETs & Power MOSFETs · MPN RFD12N06RLESM9A
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 49W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 75mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 485pF |
N-Channel 60V Surface Mount TO-252(DPAK)