onsemi RF1S530SM9A

onsemi · FETs & Power MOSFETs · MPN RF1S530SM9A

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

100V 14A 4V 79W 160mΩ@10V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs

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