onsemi · FETs & Power MOSFETs · MPN RF1K4915796
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 88nC@10V |
| Output Capacitance(Coss) | 700pF |
| Current - Continuous Drain(Id) | 6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.575nF |
| Type | N-Channel |
30V 6.3A 3V 2W 30mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs