onsemi · FETs & Power MOSFETs · MPN RF1K4915496
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| Current - Continuous Drain(Id) | 2A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 130mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 340pF |
| Gate Charge(Qg) | 17nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 140pF |
2A 2W 130mΩ@10V 4V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS