onsemi · Transistors (BJTs) · MPN NZT660A
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 75MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 250 |
| Pd - Power Dissipation | 2W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP 60V 3A 75MHz 2W Surface Mount SOT-223-4L