onsemi NZT660

onsemi · Transistors (BJTs) · MPN NZT660

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)75MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))550mV

Technical details

60V 100 PNP 3A SOT-223-4 Single Bipolar Transistors RoHS

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