onsemi · Transistors (BJTs) · MPN NZT660
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 75MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 2W |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 550mV |
60V 100 PNP 3A SOT-223-4 Single Bipolar Transistors RoHS