onsemi NZT605

onsemi · Transistors (BJTs) · MPN NZT605

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO110V
DC Current Gain2000
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.5V

Technical details

110V 2000 NPN 1.5A SOT-223 Single Bipolar Transistors RoHS

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