onsemi · FETs & Power MOSFETs · MPN NXH010P120MNF1PNG
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| Current - Continuous Drain(Id) | 114A |
|---|---|
| Pd - Power Dissipation | 250W |
| RDS(on) | 14mΩ@20V |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Drain to Source Voltage | 1.2kV |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.707nF |
| Gate Charge(Qg) | 454nC@20V |
| Operating Temperature | -40℃~+150℃ |
114A 250W 14mΩ@20V 4.3V 2 N-Channel FET, MOSFET Arrays RoHS