onsemi NVTYS9D6P04M8LTWG

onsemi · FETs & Power MOSFETs · MPN NVTYS9D6P04M8LTWG

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)842pF
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation37.5W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)9.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.368nF
TypeP-Channel

Technical details

40V 71A 3V 37.5W 9.6mΩ@10V 1 P-Channel P-Channel LFPAK-8 Single FETs, MOSFETs RoHS

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