onsemi · FETs & Power MOSFETs · MPN NVTYS029N08HTWG
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 6.3nC@10V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 32.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 369pF |
| Type | N-Channel |
80V 21A 4V 33W 32.4mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS