onsemi · FETs & Power MOSFETs · MPN NVTYS029N08HLTWG
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 6.6A;22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W;33W |
| RDS(on) | 29mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 431pF |
80V 2V 29mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS