onsemi · FETs & Power MOSFETs · MPN NVTYS025P04M8LTWG
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 367pF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 44.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF |
| Type | P-Channel |
40V 32A 3V 44.1W 25mΩ@10V 1 P-Channel P-Channel LFPAK-8 Single FETs, MOSFETs RoHS