onsemi · FETs & Power MOSFETs · MPN NVTYS014P04M8LTWG
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 595pF |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.69nF |
| Type | P-Channel |
40V 53A 3V 44W 13.5mΩ@10V 1 P-Channel P-Channel LFPAK-8 Single FETs, MOSFETs RoHS