onsemi · FETs & Power MOSFETs · MPN NVTYS010N06CLTWG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 51A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 47W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 9.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 910pF |
| Type | N-Channel |
60V 51A 2V 47W 9.8mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS