onsemi NVTYS010N04CLTWG

onsemi · FETs & Power MOSFETs · MPN NVTYS010N04CLTWG

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)261pF
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)710pF
TypeN-Channel

Technical details

40V 43A 2.2V 32W 9.5mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS

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