onsemi · FETs & Power MOSFETs · MPN NVTYS008N06CLTWG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 17nC@10V |
| Output Capacitance(Coss) | 660pF |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.23nF |
| Type | N-Channel |
60V 56A 2.2V 56W 8mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS