onsemi · FETs & Power MOSFETs · MPN NVTYS006N06CLTWG
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 71A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
| Type | N-Channel |
60V 71A 2V 61W 6.8mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS