onsemi · FETs & Power MOSFETs · MPN NVTYS004N04CLTWG
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 6.9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
40V 2V 55W 6.9mΩ@4.5V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS