onsemi NVTR01P02LT1G

onsemi · FETs & Power MOSFETs · MPN NVTR01P02LT1G

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.1nC@4.5V
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation400mW
RDS(on)350mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)225pF
TypeP-Channel

Technical details

P-Channel 20V 1.3A 400mW Surface Mount SOT-23

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