onsemi · FETs & Power MOSFETs · MPN NVTFWS8D1N08HTAG
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 61A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 8.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
| Type | N-Channel |
80V 61A 4V 75W 8.3mΩ@10V 1 N-channel N-Channel WDFNW-8(3.3x3.3) Single FETs, MOSFETs RoHS