onsemi · FETs & Power MOSFETs · MPN NVTFWS016N06CTAG
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| Gate Charge(Qg) | 6.9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF |
| RDS(on) | 13.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 489pF |
60V 32A 4V 13.6mΩ@10V 1 N-channel WDFN-8P(3.3x3.3) Single FETs, MOSFETs RoHS