onsemi · FETs & Power MOSFETs · MPN NVTFS6H888NTAG
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| Gate Charge(Qg) | 4.7nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 45.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
80V 12A 4V 18W 45.7mΩ@10V 1 N-channel WDFN-8(3x3) Single FETs, MOSFETs RoHS