onsemi NVTFS6H880NTAG

onsemi · FETs & Power MOSFETs · MPN NVTFS6H880NTAG

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Specifications

Gate Charge(Qg)6.9nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

N-Channel 80V 21A 31W Surface Mount WDFN-8(3.3x3.3)

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