onsemi · FETs & Power MOSFETs · MPN NVTFS6H860NTAG
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| Gate Charge(Qg) | 8.7nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| RDS(on) | 17.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
80V 30A 4V 46W 17.3mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS