onsemi · FETs & Power MOSFETs · MPN NVTFS6H854NWFTAG
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 44A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5.4pF |
| RDS(on) | 11.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 770pF |
80V 44A 4V 11.9mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS