onsemi NVTFS6H854NTAG

onsemi · FETs & Power MOSFETs · MPN NVTFS6H854NTAG

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)9.5A;44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.2W;68W
Reverse Transfer Capacitance (Crss@Vds)5.4pF
RDS(on)11.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

N-Channel 80V 9.5A 44A 3.2W 68W Surface Mount WDFN-8(3.3x3.3)

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