onsemi · FETs & Power MOSFETs · MPN NVTFS5811NLTAG
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| Gate Charge(Qg) | 17nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
40V 40A 2.2V 21W 1 N-channel WDFN-8 Single FETs, MOSFETs RoHS