onsemi · FETs & Power MOSFETs · MPN NVTFS4C10NTAG
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| Gate Charge(Qg) | 19.3nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15.3A;47A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 3W;28W |
| Reverse Transfer Capacitance (Crss@Vds) | 163pF |
| RDS(on) | 7.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
30V 2.2V 7.4mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS