onsemi NVTFS4C08NTWG

onsemi · FETs & Power MOSFETs · MPN NVTFS4C08NTWG

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)18.2nC@10V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.113nF

Technical details

30V 17A 2.2V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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