onsemi · FETs & Power MOSFETs · MPN NVTFS4C06NTAG
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| Gate Charge(Qg) | 11.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 71A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.683nF |
30V 71A 2.2V 37W 3.4mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS