onsemi NVTFS4C02NTAG

onsemi · FETs & Power MOSFETs · MPN NVTFS4C02NTAG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)162A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.98nF
TypeN-Channel

Technical details

30V 162A 2.2V 107W 3.1mΩ@4.5V 1 N-channel N-Channel WDFN-8(3x3) Single FETs, MOSFETs RoHS

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