onsemi NVS4409NT1G

onsemi · FETs & Power MOSFETs · MPN NVS4409NT1G

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)1.2nC@4.5V
Output Capacitance(Coss)22.4pF
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation280mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)350mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

N-Channel 25V 280mW Surface Mount SOT-323

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