onsemi · FETs & Power MOSFETs · MPN NVS4001NT1G
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.3nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 270mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 330mW |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 1Ω@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 33pF |
30V 270mA 1.5V 330mW 1Ω@4V 1 N-channel SOT-323-3 Single FETs, MOSFETs RoHS