onsemi · FETs & Power MOSFETs · MPN NVR1P02T1G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 400mW |
| RDS(on) | 280mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 165pF |
| Type | P-Channel |
20V 1A 2.3V 400mW 280mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS