onsemi · FETs & Power MOSFETs · MPN NVMYS9D3N06CLTWG
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| Gate Charge(Qg) | 9.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 450pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 9.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 880pF |
| Type | N-Channel |
60V 50A 2V 46W 9.2mΩ@10V 1 N-channel N-Channel LFPAK-4 Single FETs, MOSFETs RoHS