onsemi · FETs & Power MOSFETs · MPN NVMYS4D1N06CLTWG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 22A;100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.7W;79W |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
60V 2V 4mΩ@10V 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS