onsemi · FETs & Power MOSFETs · MPN NVMYS1D7N04CTWG
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 107.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.125nF |
| Type | N-Channel |
40V 190A 4V 107.1W 1.7mΩ@10V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS