onsemi · FETs & Power MOSFETs · MPN NVMYS1D6N04CLTWG
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 185A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 107.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 2.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.301nF |
| Type | N-Channel |
N-Channel 40V 185A 107.1W Surface Mount LFPAK-4(5x6)