onsemi · FETs & Power MOSFETs · MPN NVMYS1D6N04CLT1G
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 35A;185A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.8W;107.1W |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.301nF |
40V 3V 1.6mΩ@10V 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS