onsemi · FETs & Power MOSFETs · MPN NVMYS1D2N04CLTWG
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 109nC@10V |
| Current - Continuous Drain(Id) | 44A;258A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.9W;134W |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.33nF |
40V 2V 1.2mΩ@10V 1 N-channel LFPAK56E-4 Single FETs, MOSFETs RoHS