onsemi · FETs & Power MOSFETs · MPN NVMYS029N08LHTWG
No reviews yet — be the first to review onsemi NVMYS029N08LHTWG.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 7W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 38mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 431pF |
| Type | N-Channel |
80V 22A 2V 7W 38mΩ@4.5V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS