onsemi · FETs & Power MOSFETs · MPN NVMYS021N06CLTWG
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 410pF |
60V 27A 2V 28W 21mΩ@10V 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS