onsemi · FETs & Power MOSFETs · MPN NVMYS011N04CTWG
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 7.9nC@10V |
| Current - Continuous Drain(Id) | 13A;35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 3.8W;28W |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 420pF |
40V 3.5V 12mΩ@10V 1 N-channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS