onsemi · FETs & Power MOSFETs · MPN NVMYS010N04CLTWG
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| Output Capacitance(Coss) | 230pF |
|---|---|
| Pd - Power Dissipation | 28W |
| Configuration | - |
| Gate Charge(Qg) | 7.3nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 14A;38A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 10.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
28W 40V 2V 10.3mΩ@10V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS