onsemi · FETs & Power MOSFETs · MPN NVMYS008N08LHTWG
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.42nF |
| Type | N-Channel |
80V 59A 2V 37W 11mΩ@4.5V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS