onsemi NVMYS003N08LHTWG

onsemi · FETs & Power MOSFETs · MPN NVMYS003N08LHTWG

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)31nC@10V
Output Capacitance(Coss)458pF
Current - Continuous Drain(Id)132A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)4.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.735nF
TypeN-Channel

Technical details

80V 132A 2V 68W 4.3mΩ@4.5V 1 N-channel N-Channel LFPAK-4(5x6) Single FETs, MOSFETs RoHS

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