onsemi NVMTS4D3N15MC

onsemi · FETs & Power MOSFETs · MPN NVMTS4D3N15MC

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)79nC@10V
Output Capacitance(Coss)1.75nF
Current - Continuous Drain(Id)165A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation292W
Reverse Transfer Capacitance (Crss@Vds)12.5pF
RDS(on)4.45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.514nF
TypeN-Channel

Technical details

N-Channel 150V 165A 292W Surface Mount PowerTDFN-8(7.9x8)

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