onsemi · FETs & Power MOSFETs · MPN NVMTS1D2N08H
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| Gate Charge(Qg) | 147nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 337A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 1.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.1nF |
80V 337A 2V 300W 1.1mΩ@10V 1 N-channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS