onsemi NVMTS1D1N04CTXG

onsemi · FETs & Power MOSFETs · MPN NVMTS1D1N04CTXG

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Specifications

Gate Charge(Qg)86nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)3.145nF
Current - Continuous Drain(Id)277A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation76.5W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.41nF
TypeN-Channel

Technical details

N-Channel 40V 277A 76.5W Surface Mount DFNW-8(8.3x8.4)

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